The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Oct. 05, 2016
Globalfoundries Inc., Grand Cayman, KY;
John H. Zhang, Altamont, NY (US);
Haigou Huang, Rexford, NY (US);
Xusheng Wu, Ballston Lake, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Stan Tsai, Clifton Park, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One illustrative method disclosed includes, among other things, forming a plurality of gates above a substrate, each of the gates comprising a gate structure and a first layer of a first insulating material positioned on an upper surface of the gate structure, and forming a second layer of a second insulating material above insulating material positioned above the substrate between the laterally spaced apart gates, wherein the first insulating material and the second insulating material are selectively etchable relative to one another. The method may also include selectively removing a portion of the first layer to thereby expose a portion of the gate structure of at least one of the gates, selectively removing the exposed portion of the gate structure so as to thereby define a gate-cut cavity, and forming an insulating gate-cut structure in the gate-cut cavity.