Simone Rascuna′

Title: Simone Rascuna′: Innovator in Semiconductor Technology

Introduction

Simone Rascuna′ is a prominent inventor based in Catania, Italy, known for her significant contributions to semiconductor technology. With a total of 12 patents to her name, she has made remarkable advancements in the field, particularly in the development of junction barrier diodes and MPS devices.

Latest Patents

Among her latest patents are the "Contextual formation of a junction barrier diode and a Schottky diode in a MPS device based on silicon carbide" and the "MPS device - Merged-PiN-Schottky." This innovative MPS device comprises a solid body with a first electrical conductivity, an implanted region with a second electrical conductivity opposite to the first, and a semiconductor layer made of transition metal dichalcogenide (TMD). The design allows for efficient electrical contact between the semiconductor layer and the implanted region. Additionally, she has developed a process for working a wafer of 4H—SiC material to form a 3C—SiC layer in direct contact with the 4H—SiC material, which involves heating a selective portion of the wafer with a laser beam and allowing for crystallization.

Career Highlights

Simone has worked with notable companies such as STMicroelectronics S.r.l. and STMicroelectronics (Tours) Sas. Her experience in these organizations has allowed her to refine her skills and contribute to cutting-edge semiconductor technologies.

Collaborations

Throughout her career, Simone has collaborated with esteemed colleagues, including Mario Giuseppe Saggio and Gabriele Bellocchi. These partnerships have fostered innovation and have been instrumental in her research and development efforts.

Conclusion

Simone Rascuna′ stands out as a leading inventor in the semiconductor industry, with her patents reflecting her expertise and innovative spirit. Her work continues to influence the field and pave the way for future advancements in technology.