The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Mar. 09, 2023
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Gabriele Bellocchi, Catania, IT;
Simone Rascuna′, Catania, IT;
Paolo Badala′, Acireale, IT;
Anna Bassi, Gravina di Catania, IT;
STMICROELECTRONICS S.r.l., Agrate Brianza, IT;
Abstract
Process for manufacturing a 3C—SiC layer, comprising the steps of: providing a wafer of 4H—SiC, provided with a surface; heating, through a LASER beam, a selective portion of the wafer at least up to a melting temperature of the material of the selective portion; allowing the cooling and crystallization of the melted selective portion, thus forming the 3C—SiC layer, a Silicon layer on the 3C—SiC layer and a carbon-rich layer above the Silicon layer; completely removing the carbon-rich layer and the Silicon layer, exposing the 3C—SiC layer. If the Silicon layer is maintained on the 4H—SiC wafer, the process leads to the formation of a Silicon layer on the 4H—SiC wafer. The 3C—SiC or Silicon layer thus formed may be used for the integration, even only partial, of electrical or electronic components.