The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Feb. 16, 2024
Applicants:
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Stmicroelectronics (Tours) Sas, Tours, FR;
Inventors:
Assignees:
STMICROELECTRONICS S.r.l., Agrate Brianza, IT;
STMICROELECTRONICS (TOURS) SAS, Tours, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/50 (2025.01); H02H 9/04 (2006.01); H10D 62/40 (2025.01); H10D 62/83 (2025.01); H10D 62/832 (2025.01); H10D 62/85 (2025.01); H10D 64/23 (2025.01); H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 89/611 (2025.01); H02H 9/046 (2013.01); H10D 8/50 (2025.01); H10D 62/40 (2025.01); H10D 62/83 (2025.01); H10D 62/8325 (2025.01); H10D 62/8503 (2025.01); H10D 64/23 (2025.01);
Abstract
Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.