The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Sep. 30, 2020
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Simone Rascuna′, Catania, IT;

Claudio Chibbaro, Catania, IT;

Alfio Guarnera, Trecastagni, IT;

Mario Giuseppe Saggio, Aci Bonaccorsi, IT;

Francesco Lizio, Catania, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/04 (2006.01); H01L 21/56 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3171 (2013.01); H01L 21/045 (2013.01); H01L 21/56 (2013.01); H01L 29/1608 (2013.01);
Abstract

An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.


Find Patent Forward Citations

Loading…