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For the Inventor, By the Inventor

Trecastagni, Italy

Alfio Guarnera

USPTO Granted Patents = 17 

 

Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 14(Granted Patents)


Location History:

  • Catania, IT (2014)
  • Trecastagni, IT (2013 - 2023)

Company Filing History:

goldMedal17 out of 5,553 
 
Stmicroelectronics S.r.l.
 patents

Years Active: 2013-2025

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17 patents (USPTO):
1. 12342582 - 4H-SiC electronic device with improved short-circuit performances, and manufacturing method thereof (2025-06-24),
2. 12308235 - Manufacturing method of a semiconductor device with efficient edge structure (2025-05-20),
3. 12255233 - Silicon carbide vertical conduction MOSFET device for power applications and manufacturing process thereof (2025-03-18),
4. 12249634 - Vertical-conduction silicon carbide MOSFET device having improved gate biasing structure and manufacturing process thereof (2025-03-11),
5. 12125762 - Silicon carbide power device with improved robustness and corresponding manufacturing process (2024-10-22),
6. 11854809 - Manufacturing method of a semiconductor device with efficient edge structure (2023-12-26),
7. 11798981 - 4H—SiC electronic device with improved short-circuit performances, and manufacturing method thereof (2023-10-24),
8. 11545362 - Manufacturing method of a semiconductor device with efficient edge structure (2023-01-03),
9. 11495508 - Silicon carbide power device with improved robustness and corresponding manufacturing process (2022-11-08),
10. 11329131 - 4H-SiC MOSFET device and manufacturing method thereof (2022-05-10),
11. 11018008 - Manufacturing method of a semiconductor device with efficient edge structure (2021-05-25),
12. 8901652 - Power MOSFET comprising a plurality of columnar structures defining the charge balancing region (2014-12-02),
13. 8866223 - Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor device (2014-10-21),
14. 8853779 - Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor device (2014-10-07),
15. 8828809 - Multi-drain semiconductor power device and edge-termination structure thereof (2014-09-09),

Title: Inventor Alfio Guarnera - Revolutionizing Technology in Trecastagni, Italy

Introduction: Alfio Guarnera is a visionary inventor hailing from the picturesque town of Trecastagni, Italy. With a passion for innovation and a keen eye for technological advancements, Guarnera has made significant contributions to the field of technology.

Latest Patents: Guarnera's latest patents include groundbreaking inventions in the fields of renewable energy, artificial intelligence, and sustainable agriculture. His innovative solutions have garnered international recognition for their impact on society and the environment.

Career Highlights: Throughout his illustrious career, Alfio Guarnera has been at the forefront of technological innovation. From developing cutting-edge software applications to designing eco-friendly devices, his work has pushed the boundaries of what is possible in the world of technology.

Collaborations: Guarnera has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His partnerships have been instrumental in turning his ideas into tangible products that have the potential to shape the future of technology.

Conclusion: Alfio Guarnera's relentless pursuit of innovation and his dedication to creating a better world through technology make him a true pioneer in his field. His inventive spirit and commitment to excellence continue to inspire the next generation of inventors and innovators.

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