The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Dec. 29, 2021
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Mario Giuseppe Saggio, Aci Bonaccorsi, IT;
Edoardo Zanetti, Valverde, IT;
Alessia Maria Frazzetto, Sant'Agata li Battiati, IT;
Alfio Guarnera, Trecastagni, IT;
Cateno Marco Camalleri, Catania, IT;
Antonio Giuseppe Grimaldi, S. Giovanni la Punta, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A vertical conduction MOSFET device includes a body of silicon carbide, which has a first type of conductivity and a face. A superficial body region of a second type of conductivity has a first doping level and extends into the body to a first depth, and has a first width. A source region of the first type of conductivity extends into the superficial body region to a second depth, and has a second width. The second depth is smaller than the first depth and the second width is smaller than the first width. A deep body region of the second type of conductivity has a second doping level and extends into the body, at a distance from the face of the body and in direct electrical contact with the superficial body region, and the second doping level is higher than the first doping level.