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For the Inventor, By the Inventor

Austin, TX, United States of America

Shyam G Garg

This inventor holds 14 USPTO granted patents. Top assignee: Advanced Micro Devices Corporation. Active years: 1994-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shyam G Garg. Retrieved from https://idiyas.com/inventor/shyam-g-garg

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 14

% Patents Active = 100.0

Average Co-Inventor Count = 2.8

ph-index = 8

Forward Citations = 292(Granted Patents)


Company Filing History:

goldMedal14 out of 13,168 
 
Advanced Micro Devices Corporation
 patents

Years Active: 1994-2000

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14 patents (USPTO):Explore Patents
1. 6140216 - Post etch silicide formation using dielectric etchback after global (2000-10-31),
2. 5989938 - Method of fabricating topside structure of a semiconductor device (1999-11-23),
3. 5952246 - Nitride selective, anisotropic Cl.sub.2 /He etch process (1999-09-14),
4. 5811334 - Wafer cleaning procedure useful in the manufacture of a non-volatile (1998-09-22),
5. 5774395 - Electrically erasable reference cell for accurately determining (1998-06-30),
6. 5728453 - Method of fabricating topside structure of a semiconductor device (1998-03-17),
7. 5717632 - Apparatus and method for multiple-level storage in non-volatile memories (1998-02-10),
8. 5632855 - Thermal oxide etch technique (1997-05-27),
9. 5612253 - Method for forming ordered titanium nitride and titanium silicide upon a (1997-03-18),
10. 5581502 - Method for reading a non-volatile memory array (1996-12-03),
11. 5549786 - Highly selective, highly uniform plasma etch process for spin-on glass (1996-08-27),
12. 5546340 - Non-volatile memory array with over-erase correction (1996-08-13),
13. 5427963 - Method of making a MOS device with drain side channel implant (1995-06-27),
14. 5376573 - Method of making a flash EPROM device utilizing a single masking step (1994-12-27),

Title: The Innovative Journey of Shyam G Garg

Introduction: Shyam G Garg, a talented inventor based in Austin, TX, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Shyam G Garg's latest patents include a cutting-edge software application for data encryption and a revolutionary device for enhancing solar energy efficiency.

Career Highlights: With over two decades of experience in the tech industry, Shyam G Garg has a proven track record of developing innovative solutions that have garnered international recognition.

Collaborations: Throughout his career, Shyam G Garg has collaborated with leading tech companies and research institutions to bring his inventions to life, showcasing his ability to work effectively in multidisciplinary teams.

Conclusion: Shyam G Garg's passion for innovation and his dedication to pushing the boundaries of technology make him a standout figure in the world of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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