The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1995
Filed:
Dec. 10, 1993
Robert B Richart, Austin, TX (US);
Shyam G Garg, Austin, TX (US);
Bradley T Moore, Jr, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An MOS device is provided having a drain- or source-side implant into the channel region in order to minimize short-channel effects. Implant into the channel region is achieved using conventional processing techniques, wherein the channel implant is directed substantially perpendicular to the upper surface of the substrate. Numerous masking steps and reorientation of the substrate is not needed. Additionally, the drain- or source-side implant mask can be formed from currently existing masks and incorporated into a standard processing flow for either a standard MOS device or a memory array comprising dual-level polysilicon. If drain-side implant is chosen, then the lateral demarcation line between the drain implant and the substrate is preferably placed within the channel region, and preferably near a mid-point within the channel a spaced distance below a subsequently placed, overlying polysilicon.