The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 1997
Filed:
Aug. 29, 1995
Stephen A Jones, Austin, TX (US);
Shyam G Garg, Austin, TX (US);
Advanced Micro Devices, Sunnyvale, CA (US);
Abstract
A process is provided for etching thermally grown oxide. The process involves various steps and specific etch processing parameters used within a parallel electrode reactor. There are pre-stabilizing steps, followed by an etch step, which is then followed by post-stabilizing steps. The post-stabilizing steps may further include a particle removal or byproduct flush step in addition to the post-stabilizing steps. The process parameters are chosen to remove thermal oxide within contact regions at a uniform rate. The resulting thermal oxide is substantially uniform with less than 3.0% variance in thickness across the contact regions and across like areas of the entire wafer surface. The unique combination of pre-stabilize, etch, post-stabilize steps and process parameters chosen for each step thereby provides an improved etch uniformity of thermal oxide films within fine-line areas.