Shuo-Hsun Chang

Title: Shuo-Hsun Chang: Innovator in Substrate Technology

Introduction

Shuo-Hsun Chang is a prominent inventor based in Zhongli, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of substrate structures. With a total of three patents to his name, Chang's work has advanced the manufacturing processes in the semiconductor industry.

Latest Patents

Chang's latest patents focus on innovative substrate structures and methods for their manufacturing. One of his notable patents describes a substrate structure that includes a core substrate, an interconnection portion, and a solder mask. The core substrate features a top surface and a bottom surface, with a circuit pattern disposed on the top surface. The interconnection portion includes a surface dielectric layer and a surface circuit layer that is electrically connected to the circuit pattern. Additionally, the solder mask is designed with a hole to identify the substrate structure. Another patent elaborates on a similar substrate structure, emphasizing the inclusion of an indentation above the hole in the solder mask. These patents reflect Chang's commitment to enhancing substrate technology.

Career Highlights

Shuo-Hsun Chang is currently employed at Advanced Semiconductor Engineering, Inc., where he continues to innovate in the semiconductor field. His work has not only contributed to the company's success but has also positioned him as a key figure in substrate technology.

Collaborations

Chang has collaborated with notable colleagues such as Chi-Chih Huang and Shu-Luan Chan. Their combined expertise has fostered advancements in semiconductor manufacturing processes.

Conclusion

Shuo-Hsun Chang's contributions to substrate technology through his patents and collaborations highlight his role as an influential inventor in the semiconductor industry. His work continues to pave the way for future innovations in this critical field.