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Years Active: 2015-2025
Title: Shunsuke Koshioka: Innovator in Semiconductor Technology
Introduction
Shunsuke Koshioka, an inventive mind hailing from Tochigi, Japan, has made significant contributions to the field of semiconductor technology. With a robust portfolio of 17 patents, his work focuses on enhancing the functionality and efficiency of semiconductor devices, particularly transistors.
Latest Patents
Among his latest innovations, Koshioka has developed a semiconductor device featuring a transistor that incorporates a multilayer film. This film consists of an oxide semiconductor film and an oxide film stacked together, along with a gate electrode and a gate insulating film. Notably, the multilayer film is designed to overlap with the gate electrode, with the gate insulating film interposed between them. The unique design includes an acute first angle between the bottom surface of the oxide semiconductor film and its side surface, as well as a second, larger angle for the oxide film. This distinct angle configuration is aimed at improving the efficiency and performance of the semiconductor device.
Career Highlights
Throughout his career, Shunsuke Koshioka has been associated with prominent companies such as Semiconductor Energy Laboratory Co., Ltd. and Sharp Corporation. His experience in these esteemed organizations has allowed him to sharpen his skills and amplify his innovative capabilities, further contributing to the advancement of semiconductor technology.
Collaborations
Koshioka has collaborated with talented individuals, including fellow researchers Takahiro Sato and Takayuki Cho. Working alongside such skilled colleagues has facilitated the exchange of ideas and innovative concepts, driving the development of groundbreaking semiconductor solutions.
Conclusion
In summary, Shunsuke Koshioka stands out as a noteworthy inventor in the semiconductor field, with a proven track record of innovation through his patents and collaborations. His dedicated efforts continue to push the boundaries of technology, paving the way for the future of semiconductor devices.