Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Shunsuke Koshioka

Takahiro Sato

Takayuki Cho

Yasutaka Nakazawa

Masami Jintyou

Hajime Tokunaga

Shunpei Yamazaki

Naoya Sakamoto

Masatoshi Yokoyama

Rihito Wada

Junko Suzawa

Kenichi Okazaki

Masahiko Hayakawa

Yoshitaka Yamamoto

Masahiro Katayama

Takuya Matsuo

Hiroshi Matsukizono

Yosuke Kanzaki

Tetsuya Ohshima

A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

Semiconductor device

A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1&#xd7;10molecules/cmby thermal desorption spectroscopy.

Semiconductor device, display device including semiconductor device, display module including display device, and electronic device including semiconductor device, display device, and display module

To provide a highly flexible display device excellent in mass-productivity. A display device includes a flexible substrate, an adhesive layer over the substrate, a resin layer over the adhesive layer, an inorganic insulating layer over the resin layer, a transistor over the inorganic insulating layer, and a display element electrically connected to the transistor. The transistor includes an oxide semiconductor in a channel formation region. The resin layer includes sulfur.

Display device and electronic device

The semiconductor device includes an oxide semiconductor; a source electrode and a drain electrode in contact with the oxide semiconductor; a gate insulating film over the oxide semiconductor, the source electrode, and the drain electrode; and a gate electrode overlapping the oxide semiconductor, part of the source electrode, and part of the drain electrode with the gate insulating film positioned therebetween. The source electrode and the drain electrode each include a Cu&#x2014;X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti), and the thickness of a region of the oxide semiconductor over which neither the source electrode nor the drain electrode is provided is smaller than the thicknesses of regions of the oxide semiconductor over which the source electrode and the drain electrode are provided.

Semiconductor device and method for manufacturing the same

To provide a highly reliable semiconductor device which includes a transistor including an oxide semiconductor, in a semiconductor device including a staggered transistor having a bottom-gate structure provided over a glass substrate, a gate insulating film in which a first gate insulating film and a second gate insulating film, whose compositions are different from each other, are stacked in this order is provided over a gate electrode layer. Alternatively, in a staggered transistor having a bottom-gate structure, a protective insulating film is provided between a glass substrate and a gate electrode layer. A metal element contained in the glass substrate has a concentration lower than or equal to 5&#xd7;10atoms/cmat the interface between the first gate insulating film and the second gate insulating film or the interface between the gate electrode layer and a gate insulating film.

A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.

Oxide semiconductor device and manufacturing method therof

A method for manufacturing a semiconductor device includes the steps of forming a first conductive film over a substrate; forming an insulating film over the first conductive film; forming an oxide semiconductor film over the insulating film to overlap with the first conductive film; forming a second conductive film including a metal film containing molybdenum as its main component and a metal film containing copper as its main component over the oxide semiconductor film; and etching the second conductive film by an etchant. At the time of etching the second conductive film by the etchant, the oxide semiconductor film is used as an etching stopper film. In addition, the etchant which can be used for a transistor including the oxide semiconductor film is provided.

Growing community of inventors

Tochigi, Japan

Shunsuke Koshioka