The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Jul. 09, 2013
Shunpei Yamazaki, Setagaya, JP;
Naoya Sakamoto, Tochigi, JP;
Takahiro Sato, Tochigi, JP;
Shunsuke Koshioka, Tochigi, JP;
Takayuki Cho, Tochigi, JP;
Yoshitaka Yamamoto, Yamatokoriyama, JP;
Takuya Matsuo, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Yosuke Kanzaki, Osaka, JP;
Shunpei Yamazaki, Setagaya, JP;
Naoya Sakamoto, Tochigi, JP;
Takahiro Sato, Tochigi, JP;
Shunsuke Koshioka, Tochigi, JP;
Takayuki Cho, Tochigi, JP;
Yoshitaka Yamamoto, Yamatokoriyama, JP;
Takuya Matsuo, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Yosuke Kanzaki, Osaka, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Abstract
A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.