IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10361318 B1

PDFFull Text
Date of Patent:
Jul. 23, 2019

Filed:

Oct. 17, 2017

Semiconductor device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Takahiro Sato, Tochigi, JP;

Yasutaka Nakazawa, Tochigi, JP;

Takayuki Cho, Tochigi, JP;

Shunsuke Koshioka, Tochigi, JP;

Hajime Tokunaga, Yokohama, JP;

Masami Jintyou, Shimotsuga, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorneys:

Robinson Intellectual Property Law Office

Eric J. Robinson

Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/24 (2006.01); H01L 29/423 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01); H01L 21/465 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); G02F 1/1368 (2013.01); G02F 1/136277 (2013.01); H01L 21/02365 (2013.01); H01L 21/02403 (2013.01); H01L 21/02422 (2013.01); H01L 21/02551 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 21/30604 (2013.01); H01L 21/465 (2013.01); H01L 27/1225 (2013.01); H01L 27/1259 (2013.01); H01L 27/3248 (2013.01); H01L 29/045 (2013.01); H01L 29/0657 (2013.01); H01L 29/1033 (2013.01); H01L 29/24 (2013.01); H01L 29/42356 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); H01L 29/78693 (2013.01);
Abstract

A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

Find Patent Forward Citations

Loading…