Shuming Xu

Title: Innovations of Shuming Xu

Introduction

Shuming Xu is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of capacitors and radio frequency switches. With a total of two patents to his name, Xu's work has implications for various electronic applications.

Latest Patents

Xu's latest patents include an "Enhanced Capacitor for Integration with Metal-Oxide Semiconductor Field-Effect Transistor." This invention provides a capacitor designed for integration with MOSFET devices formed on the same substrate. The capacitor features a first plate with a doped semiconductor layer, an insulating layer, and a second plate made of polysilicon. An inversion layer is created in the doped semiconductor layer, which is influenced by the voltage applied between the capacitor plates. Additionally, he holds a patent for an "Enhanced Radio Frequency Switch and Fabrication Methods Thereof." This RF switch device includes a semiconductor substrate and a mesa that extends vertically from the substrate. The mesa is designed to form a primary current conduction path, enhancing the performance of RF switch devices.

Career Highlights

Throughout his career, Shuming Xu has worked with several prominent companies in the semiconductor industry. He has been associated with Powerlite Semiconductor (Shanghai) Co., Ltd. and Shanghai Bright Power Semiconductor Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technologies.

Collaborations

Xu has collaborated with notable colleagues, including Hang Fan and Jian Wu. These partnerships have likely fostered innovation and development in their respective projects.

Conclusion

Shuming Xu's contributions to semiconductor technology through his patents and career experiences highlight his role as an influential inventor in the field. His work continues to impact the development of advanced electronic devices.