The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Jul. 15, 2022
Shanghai Bright Power Semiconductor Co., Ltd., Shanghai, CN;
Luyao Song, Shanghai, CN;
Hang Fan, Shanghai, CN;
Jian Wu, Shanghai, CN;
Lei Shi, Shanghai, CN;
Shuming Xu, Shanghai, CN;
SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD., Shanghai, CN;
Abstract
A semiconductor structure includes at least a first chip, the first chip comprising a semiconductor substrate and an active layer formed on an upper surface of the substrate, one or more lateral metal-oxide semiconductor devices being formed in the active layer of the first chip. The semiconductor structure further includes at least a first integrated capacitor disposed on a back-side of the semiconductor substrate of the first chip. The first integrated capacitor includes a first conductive layer in electrical connection with the back-side of the substrate, an insulating layer formed on at least a portion of an upper surface of the first conductive layer, and a second conductive layer formed on at least a portion of an upper surface of the insulating layer.