The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Dec. 12, 2022
Shanghai Bright Power Semiconductor Co., Ltd., Shanghai, CN;
SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD., Shanghai, CN;
Abstract
An LDMOS device includes a semiconductor substrate of a first conductivity type, a doped drift region of a second conductivity type formed on at least a portion of the substrate, and a body region of the first conductivity type formed in the drift region. Source and drain regions of the second conductivity type are formed proximate an upper surface of the body region and drift region, respectively, and spaced laterally from one another. A gate structure is disposed between the source and drain regions and includes a control gate formed over the body region, and a field plate formed over the drift region, the gate structure being electrically isolated from the body and drift regions by a first insulating layer. An oxide structure is formed on a portion of the field plate and a portion of the drift region, the oxide structure overlapping a corner of the field plate.