Shanghai Bright Power Semiconductor Co., Ltd.

Powerlite Semiconductor (Shanghai) Co., Ltd

Shuming Xu

Hang Fan

Jian Wu

Lei Shi

Luyao Song

A semiconductor structure includes at least a first chip, the first chip comprising a semiconductor substrate and an active layer formed on an upper surface of the substrate, one or more lateral metal-oxide semiconductor devices being formed in the active layer of the first chip. The semiconductor structure further includes at least a first integrated capacitor disposed on a back-side of the semiconductor substrate of the first chip. The first integrated capacitor includes a first conductive layer in electrical connection with the back-side of the substrate, an insulating layer formed on at least a portion of an upper surface of the first conductive layer, and a second conductive layer formed on at least a portion of an upper surface of the insulating layer.

Three-dimensional bipolar-CMOS-DMOS (BCD) structure with integrated back-side capacitor

A capacitor is provided for integration with a MOSFET device(s) formed on the same substrate. The capacitor comprises a first plate including a doped semiconductor layer of a first conductivity type, an insulating layer formed on an upper surface of the doped semiconductor layer, and a second plate including a polysilicon layer formed on an upper surface of the insulating layer. An inversion layer is formed in the doped semiconductor layer, beneath the insulating layer and proximate the upper surface of the doped semiconductor layer, as a function of an applied voltage between the first and second plates of the capacitor. At least one doped region of a second conductivity type, opposite the first conductivity type, is formed in the doped semiconductor layer adjacent to a drain and/or source region of the first conductivity type formed in the MOSFET device. The doped region is electrically connected to the inversion layer.

Enhanced capacitor for integration with metal-oxide semiconductor field-effect transistor

A radio frequency (RF) switch device includes a semiconductor substrate, doped with an impurity of a first conductivity type at a first doping concentration level, and a mesa extending vertically from an upper surface of the substrate and formed contiguous therewith. The mesa includes a drift region doped with the impurity of the first conductivity type at a second doping concentration level, the second doping concentration level being less than the first doping concentration level. The mesa forms a primary current conduction path in the RF switch device. The RF switch device further includes an insulator layer disposed on at least a portion of the upper surface of the substrate and sidewalls of the mesa, and at least one gate disposed on at least a portion of an upper surface of the insulator layer, the gate at least partially surrounding the mesa.

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Shanghai, China

Shuming Xu