Shanghai Bright Power Semiconductor Co., Ltd.

Powerlite Semiconductor (shanghai) Co., Ltd

Shuming Xu

Hang Fan

Jian Wu

A capacitor is provided for integration with a MOSFET device(s) formed on the same substrate. The capacitor comprises a first plate including a doped semiconductor layer of a first conductivity type, an insulating layer formed on an upper surface of the doped semiconductor layer, and a second plate including a polysilicon layer formed on an upper surface of the insulating layer. An inversion layer is formed in the doped semiconductor layer, beneath the insulating layer and proximate the upper surface of the doped semiconductor layer, as a function of an applied voltage between the first and second plates of the capacitor. At least one doped region of a second conductivity type, opposite the first conductivity type, is formed in the doped semiconductor layer adjacent to a drain and/or source region of the first conductivity type formed in the MOSFET device. The doped region is electrically connected to the inversion layer.

Enhanced capacitor for integration with metal-oxide semiconductor field-effect transistor

A radio frequency (RF) switch device includes a semiconductor substrate, doped with an impurity of a first conductivity type at a first doping concentration level, and a mesa extending vertically from an upper surface of the substrate and formed contiguous therewith. The mesa includes a drift region doped with the impurity of the first conductivity type at a second doping concentration level, the second doping concentration level being less than the first doping concentration level. The mesa forms a primary current conduction path in the RF switch device. The RF switch device further includes an insulator layer disposed on at least a portion of the upper surface of the substrate and sidewalls of the mesa, and at least one gate disposed on at least a portion of an upper surface of the insulator layer, the gate at least partially surrounding the mesa.

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Shanghai, China

Shuming Xu