The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Aug. 17, 2022
Shanghai Bright Power Semiconductor Co., Ltd., Shanghai, CN;
Lei Shi, Shanghai, CN;
Jian Wu, Shanghai, CN;
Hang Fan, Shanghai, CN;
Luyao Song, Shanghai, CN;
Shuming Xu, Shanghai, CN;
SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD., Shanghai, CN;
Abstract
A high-frequency LDMOS device includes a semiconductor substrate of a first conductivity type, a doped drift region of a second conductivity type formed on the substrate, and a body region of the first conductivity type formed in the doped drift region. Source and drain regions of the second conductivity type are formed proximate an upper surface of the body region and doped drift region, respectively, and spaced laterally from one another. A first insulating layer is formed on the body and doped drift regions. A gate structure including multiple gate segments is formed on the first insulating layer. Each of the gate segments is spaced laterally from one another by a second insulating layer disposed between adjacent gate segments. A spacing between adjacent gate segments is controlled as a function of a thickness of the second insulating layer, a thickness of the first and second insulating layers being independently controlled.