The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
May. 16, 2022
Shanghai Bright Power Semiconductor Co., Ltd., Shanghai, CN;
Shuming Xu, Shanghai, CN;
Jian Wu, Shanghai, CN;
SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD., Shanghai, CN;
Abstract
A capacitor is provided for integration with a MOSFET device(s) formed on the same substrate. The capacitor comprises a first plate including a doped semiconductor layer of a first conductivity type, an insulating layer formed on an upper surface of the doped semiconductor layer, and a second plate including a polysilicon layer formed on an upper surface of the insulating layer. An inversion layer is formed in the doped semiconductor layer, beneath the insulating layer and proximate the upper surface of the doped semiconductor layer, as a function of an applied voltage between the first and second plates of the capacitor. At least one doped region of a second conductivity type, opposite the first conductivity type, is formed in the doped semiconductor layer adjacent to a drain and/or source region of the first conductivity type formed in the MOSFET device. The doped region is electrically connected to the inversion layer.