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Shuji Fujiwara

USPTO Granted Patents = 9 (Patent Applications = 1)

Average Co-Inventor Count = 2.1

ph-index = 3

Forward Citations = 26(Granted Patents)

Location History:

Tsukuba, JP (1993 - 1999)
Ibaraki-ken, JP (1999)
Hashima, JP (2008 - 2020)

Company Filing History:

Sanyo Electric Co., Ltd.

Semiconductor Components Industries, LLC

Years Active: 1993-2020

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9 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10692853 - Electrostatic discharge (ESD) robust transistors and related methods (2020-06-23),

2. 8723258 - Electrostatic discharge (ESD) tolerance for a lateral double diffusion metal oxide semiconductor (LDMOS) transistor (2014-05-13),

3. 8674445 - Electrostatic discharge failure protective element, electrostatic discharge failure protective circuit, semiconductor device and semiconductor device manufacturing method (2014-03-18),

4. 7564075 - Semiconductor device (2009-07-21),

5. 7459766 - Semiconductor bipolar transistor (2008-12-02),

6. 5880069 - Process of making high T.sub.c Josephson junction device (1999-03-09),

7. 5873985 - Process of making squid device having tilt-boundary junction (1999-02-23),

8. 5356870 - Method for processing superconducting thin films (1994-10-18),

9. 5227364 - Method of forming patterned oxide superconducting films and Josephson (1993-07-13),

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