The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Sep. 26, 2008
Shuji Fujiwara, Hashima, JP;
Shuji Fujiwara, Hashima, JP;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
An electrostatic discharge failure protective element () is provided with second conductivity type source region () and drain region (), which are formed at a prescribed interval to sandwich a channel region () on the surface of a first conductivity type semiconductor substrate (); a first conductivity type well region () formed to cover the source region; a second conductivity type buried layer () formed below the first conductivity type well region; a second conductivity type first impurity region () formed between the drain region and the buried layer to constitute a current path; and a second conductivity type second impurity region () to isolate the well region and the semiconductor substrate one from the other.