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For the Inventor, By the Inventor

Fremont, CA, United States of America

Shiqian Shao

This inventor holds 10 USPTO granted patents. Top assignee: Sandisk Technologies Inc.. Active years: 2021-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shiqian Shao. Retrieved from https://idiyas.com/inventor/shiqian-shao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10

% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 2

Forward Citations = 21(Granted Patents)


Company Filing History:

goldMedal10 out of 4,955 
 
Sandisk Technologies Inc.
 patents

Years Active: 2021-2025

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10 patents (USPTO):Explore Patents
1. 12406729 - Non-volatile memory with inter-die connection (2025-09-02),
2. 12354955 - Three-dimensional memory device with high contact via density and methods of forming the same (2025-07-08),
3. 12347492 - Three-dimensional memory device with high contact via density and methods of forming the same (2025-07-01),
4. 11973044 - Non-volatile memory with efficient signal routing (2024-04-30),
5. 11894056 - Non-volatile memory with efficient word line hook-up (2024-02-06),
6. 11817150 - Non-volatile memory with different word line hook up regions based on pass through signals (2023-11-14),
7. 11728305 - Capacitor structure including bonding pads as electrodes and methods of forming the same (2023-08-15),
8. 11424207 - Non-volatile memory with different use of metal lines in word line hook up regions (2022-08-23),
9. 11404123 - Non-volatile memory with multiple wells for word line switch transistors (2022-08-02),
10. 11139237 - Three-dimensional memory device containing horizontal and vertical word line interconnections and methods of forming the same (2021-10-05),

Title: Inventor Spotlight: Shiqian Shao

Introduction

Shiqian Shao, an innovative inventor based in Fremont, California, has made significant contributions to the field of memory technology. With a remarkable portfolio of 9 patents, his work has pushed the boundaries of what is possible in semiconductor memory devices.

Latest Patents

Among his latest innovations is a groundbreaking patent for a three-dimensional memory device with high contact via density and methods of forming the same. This invention encompasses a complex architecture that includes an alternating stack of insulating layers and electrically conductive layers. The design features two laterally spaced three-dimensional memory arrays, each positioned within its own memory array region, enhancing performance and efficiency.

The inter-array region presents a unique stepped cavity with vertical steps of the alternating stack that extends in various horizontal directions, allowing multiple rows of contact via structures to interact with different electrically conductive layers. This inventive design not only optimizes memory density but also introduces flexibility in the memory architecture.

Career Highlights

Shiqian Shao has made his mark in the industry while working at Sandisk Technologies Inc., where he has focused on advancing memory technologies. His experience and knowledge in the field have positioned him as a vital contributor to the company's innovative projects.

Collaborations

Throughout his career, Shiqian has collaborated with esteemed colleagues such as Fumiaki Toyama and Hirofumi Tokita. Together, they have contributed to developing cutting-edge technologies that continue to shape the future of memory solutions.

Conclusion

With his impressive portfolio and collaborative spirit, Shiqian Shao stands out as a dedicated inventor in the technology sector. His work on three-dimensional memory devices is paving the way for future advancements, demonstrating the significant impact of innovative thought in the field of electronics and memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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