The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Dec. 23, 2021
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Shiqian Shao, Fremont, CA (US);

Fumiaki Toyama, Cupertino, CA (US);

Tuan Pham, San Jose, CA (US);

Assignee:

SanDisk Technologies LLC, Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract

An integrated memory assembly comprises a control die bonded to a memory die. The memory die includes multiple non-volatile memory structures (e.g., planes, arrays, groups of blocks, etc.), each comprising a stack of alternating conductive and dielectric layers forming staircases at one or more edges of the non-volatile memory structures. The non-volatile memory structures are positioned with gaps between the non-volatile memory structures such that the gaps separate the staircases of adjacent non-volatile memory structures. Metal interlayer segments positioned in the gaps are connected to a top metal layer positioned above non-volatile memory structures and to one or more electrical circuits on the control die via zero, one or more other metal layers/segments.


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