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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11817150 B1

PDFFull Text
Date of Patent:
Nov. 14, 2023

Filed:

Apr. 30, 2021

Non-volatile memory with different word line hook up regions based on pass through signals

Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Shiqian Shao, Fremont, CA (US);

Fumiaki Toyama, Cupertino, CA (US);

Assignee:

Sandisk Technologies LLC, Addison, TX (US);

Attorney:

Vierra Magen Marcus LLP

Primary Examiner:

Tha-O H Bui

Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H01L 25/00 (2006.01); G11C 16/16 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 11/5628 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/16 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H01L 2224/08145 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06562 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1438 (2013.01); H01L 2924/1443 (2013.01); H01L 2924/14511 (2013.01);
Abstract

To overcome a shortage of area for horizontal metal lines to connect word line switch transistors to corresponding word lines and for pass through signal lines, it is proposed to implement multiple architectures for the word line hook up regions. For example, some areas of a die will be designed to provide extra horizontal metal lines to connect word line switch transistors to word lines and other areas of the die will be designed to provide extra pass through signal lines.

Find Patent Forward Citations

Shao, Shiqian. (2023). Non-volatile memory with different word line hook up regions based on pass through signals (U.S. Patent No. 11817150). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11817150

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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