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For the Inventor, By the Inventor

Tsukuba, Japan

Shinji Yuasa

This inventor holds 39 USPTO granted patents and 4 published patent applications and 2 EPO patents, primarily in Magnetoresistive Memory. Top assignees: National Institute of Advanced Industrial Science and Technology, Japan Science and Technology Agency, Kabushiki Kaisha Toshiba. Active years: 2004-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shinji Yuasa. Retrieved from https://idiyas.com/inventor/shinji-yuasa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 39 

% Patents Active = 79.5


Average Co-Inventor Count = 2.5

ph-index = 10

Forward Citations = 312(Granted Patents)


Location History:

  • Tsukuba, JP (2004 - 2021)
  • Ibaraki, JP (2010 - 2024)

Company Filing History:

goldMedal25 out of 1,765 
 
National Institute of Advanced Industrial Science and Technology
 patents
silverMedal11 out of 1,328 
 
Japan Science and Technology Agency
 patents
bronzeMedal11 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents
4. 4 out of 1,051 
 
Tohoku University
 patents
5. 3 out of 363 
 
Canon Anelva Corporation
 patents
6. 2 out of 171 
 
Godo Kaisha IP Bridge 1
 patents
7. 1 out of 575 
 
National Institute for Materials Science
 patents
8. 1 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 2004-2026

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Areas of Expertise:
Magnetoresistive Random Access Memory
Magnetic Tunnel Junction
Magnetic Memory Device
Magnetoresistive Element
Resistance Change Type Memory
High-Frequency Oscillation Circuit
Optical Isolator
Nonvolatile Optical Memory
Negative-Resistance Device
Microwave Transmission Line
Tunneling Magnetoresistive Head
Random Number Generating Device
39 patents (USPTO):Explore Patents
1. 12725632 - Magnetic storage device provided with magnetoresistive element (2026-09-01),
2. 11968909 - Method of manufacturing a magnetoresistive random access memory (MRAM) (2024-04-23),
3. 11737372 - Method of manufacturing a magnetoresistive random access memory (MRAM) (2023-08-22),
4. 11233193 - Method of manufacturing a magnetorestive random access memeory (MRAM) (2022-01-25),
5. 11133459 - Magnetic element, magnetic memory device, and magnetic sensor (2021-09-28),
6. 11031062 - Magnetic memory device and method for controlling a write pulse (2021-06-08),
7. 10998490 - Magnetic element (2021-05-04),
8. 10680167 - Magnetic tunnel junction device (2020-06-09),
9. 10432144 - High-frequency phase-locked oscillation circuit (2019-10-01),
10. 10431303 - Resistance change type memory including write control circuit to control write to variable resistance element (2019-10-01),
11. 10388347 - Non-collinear magnetoresistive device (2019-08-20),
12. 10367138 - Magnetic tunnel junction device (2019-07-30),
13. 10319902 - Magnetoresistive device (2019-06-11),
14. 9620189 - Magnetic memory (2017-04-11),
15. 9608198 - Magnetic tunnel junction device (2017-03-28),

Title: The Innovative Journey of Shinji Yuasa

Introduction: Shinji Yuasa is a pioneering inventor hailing from Tsukuba, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Shinji Yuasa holds several patents in the realm of electronics and semiconductor technology, showcasing his continuous dedication to pushing the boundaries of innovation.

Career Highlights: With a career spanning over two decades, Shinji Yuasa has worked tirelessly to develop cutting-edge technologies that have revolutionized the industry. His expertise in semiconductor devices has led to significant advancements in various electronic applications.

Collaborations: Throughout his career, Shinji Yuasa has collaborated with leading research institutions, universities, and tech companies to further his research and bring his inventions to life. His collaborative spirit has been instrumental in the success of many projects.

Conclusion: Shinji Yuasa's relentless pursuit of innovation and his passion for creating transformative technologies have solidified his position as a prominent figure in the world of inventors. His contributions continue to inspire future generations of innovators to push the boundaries of what is possible in the realm of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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