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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10680167 B1

PDFFull Text
Date of Patent:
Jun. 09, 2020

Filed:

Jun. 18, 2019

Magnetic tunnel junction device

Applicants:

Japan Science and Technology Agency, Kawaguchi-shi, Saitama, JP;

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Inventor:

Shinji Yuasa, Ibaraki, JP;

Assignees:

JAPAN SCIENCE AND TECHNOLOGY AGENCY, Kawaguchi-shi, JP;

NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;

Attorney:

Xsensus LLP

Primary Examiner:

Alonzo Chambliss

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/00 (2006.01); H01L 43/10 (2006.01); H01F 10/13 (2006.01); G11C 11/15 (2006.01); H01L 49/02 (2006.01); H01L 27/11507 (2017.01); B82Y 25/00 (2011.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01F 10/32 (2006.01); H01L 43/02 (2006.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); B82Y 25/00 (2013.01); G11C 11/15 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); H01F 10/132 (2013.01); H01F 10/3254 (2013.01); H01L 27/11507 (2013.01); H01L 27/222 (2013.01); H01L 27/228 (2013.01); H01L 28/55 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); B82Y 10/00 (2013.01); H01L 27/22 (2013.01);
Abstract

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

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