The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Nov. 20, 2015
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Naoharu Shimomura, Tokyo, JP;
Eiji Kitagawa, Yokohama, JP;
Minoru Amano, Sagamihara, JP;
Daisuke Saida, Tokyo, JP;
Kay Yakushiji, Tsukuba, JP;
Takayuki Nozaki, Tsukuba, JP;
Shinji Yuasa, Tsukuba, JP;
Akio Fukushima, Tsukuba, JP;
Hiroshi Imamura, Tsukuba, JP;
Hitoshi Kubota, Tsukuba, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.