The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2021

Filed:

Apr. 04, 2018
Applicant:

National Institute of Advanced Industrial Science and Technology, Chiyoda-ku, JP;

Inventors:

Yoichi Shiota, Tsukuba, JP;

Takayuki Nozaki, Tsukuba, JP;

Shinji Yuasa, Tsukuba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01F 10/32 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/161 (2013.01); H01L 43/02 (2013.01); G11C 11/1659 (2013.01); H01F 10/3254 (2013.01); H01L 43/10 (2013.01);
Abstract

According to one embodiment, a magnetic memory device includes a stacked body and a controller. The stacked body includes a first conductive layer, a second conductive layer, a first magnetic layer provided between the first conductive layer and the second conductive layer, a second magnetic layer provided between the first magnetic layer and the second conductive layer, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A resistance value per unit area of the nonmagnetic layer exceeds 20 Ωμm. The controller is electrically connected to the first conductive layer and the second conductive layer, and supplies a write pulse to the stacked body in a first operation. The write pulse includes a rise period, a potential of the write pulse changing from a first potential toward a second potential in the rise period, an intermediate period of the second potential after the rise period, and a fall period after the intermediate period, the potential of the write pulse changing from the second potential toward the first potential in the fall period. A duration of the fall period is longer than a duration of the rise period.


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