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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11737372 B1

PDFFull Text
Date of Patent:
Aug. 22, 2023

Filed:

Dec. 23, 2021

Method of manufacturing a magnetoresistive random access memory (mram)

Applicant:

Godo Kaisha Ip Bridge 1, Tokyo, JP;

Inventor:

Shinji Yuasa, Ibaraki, JP;

Assignee:

GODO KAISHA IP BRIDGE 1, Tokyo, JP;

Attorney:

Myers Wolin, LLC

Primary Examiner:

Alonzo Chambliss

Int. Cl.
CPC ...
H01L 27/105 (2023.01); H10N 50/85 (2023.01); H01F 10/13 (2006.01); G11C 11/15 (2006.01); H01L 49/02 (2006.01); B82Y 25/00 (2011.01); G11C 11/16 (2006.01); H10B 53/30 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H01F 10/32 (2006.01); B82Y 10/00 (2011.01); H10N 59/00 (2023.01);
U.S. Cl.
CPC ...
H10N 50/85 (2023.02); B82Y 25/00 (2013.01); G11C 11/15 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); H01F 10/132 (2013.01); H01F 10/3254 (2013.01); H01L 28/55 (2013.01); H10B 53/30 (2023.02); H10B 61/00 (2023.02); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); B82Y 10/00 (2013.01); H10N 59/00 (2023.02);
Abstract

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

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