IDiyas

For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Shin-Ae Lee

USPTO Granted Patents = 20

Average Co-Inventor Count = 6.3

ph-index = 10

Forward Citations = 238(Granted Patents)


Location History:

  • Suwon-si, KR (2005)
  • Seoul, KR (2005 - 2009)
  • Gyeonggi-do, KR (2006 - 2011)

Company Filing History:

goldMedal20 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2005-2011

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20 patents (USPTO):
1. 7871914 - Methods of fabricating semiconductor devices with enlarged recessed gate electrodes (2011-01-18),
2. 7615429 - Methods of fabricating field effect transistors having multiple stacked channels (2009-11-10),
3. 7541656 - Semiconductor devices with enlarged recessed gate electrodes (2009-06-02),
4. 7541645 - Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions (2009-06-02),
5. 7534707 - MOS Transistors having inverted T-shaped gate electrodes and fabrication methods thereof (2009-05-19),
6. 7473963 - Metal oxide semiconductor (MOS) transistors having three dimensional channels (2009-01-06),
7. 7397131 - Self-aligned semiconductor contact structures (2008-07-08),
8. 7381601 - Methods of fabricating field effect transistors having multiple stacked channels (2008-06-03),
9. 7285466 - Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels (2007-10-23),
10. 7154154 - MOS transistors having inverted T-shaped gate electrodes (2006-12-26),
11. 7148527 - Semiconductor devices with enlarged recessed gate electrodes (2006-12-12),
12. 7132349 - Methods of forming integrated circuits structures including epitaxial silicon layers in active regions (2006-11-07),
13. 7129541 - Field effect transistors including vertically oriented gate electrodes extending inside vertically protruding portions of a substrate (2006-10-31),
14. 7122431 - Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions (2006-10-17),
15. 7071517 - Self-aligned semiconductor contact structures and methods for fabricating the same (2006-07-04),

Title: Innovations by Inventor Shin-Ae Lee in Semiconductor Technology

Introduction

Shin-Ae Lee is an accomplished inventor based in Gyeonggi-do, South Korea, known for his significant contributions to semiconductor technology. With a remarkable portfolio of 20 patents, Lee has played a vital role in advancing the fabrication methods of semiconductor devices and field-effect transistors.

Latest Patents

Shin-Ae Lee's most recent patents include innovative methods for fabricating semiconductor devices with enlarged recessed gate electrodes. These semiconductor devices feature a unique design that incorporates a recess in the substrate along with a gate insulator disposed within it. The gate electrode consists of a first portion situated on the gate insulator and a second reduced-width portion extending from the first, facilitating enhanced performance. His advanced design allows for the use of curved recess shapes, contributing to improved efficiency and functionality in semiconductor applications.

Another notable patent is focused on the fabrication of field-effect transistors that utilize multiple stacked channels. This innovation involves an integrated circuit where channels are alternately stacked and spaced apart, creating tunnels between adjacent channels. The robust architecture allows for an effective gate electrode to surround the channels while accommodating a pair of source/drain regions at both ends, thus enhancing the overall performance of integrated circuits.

Career Highlights

Shin-Ae Lee has made substantial strides in the field of semiconductors through his role at Samsung Electronics Co., Ltd. His work at this globally recognized company has allowed him to harness his expertise and creativity to push the boundaries of semiconductor technology. His contributions stand at the forefront of innovations aimed at improving device performance and integration.

Collaborations

Throughout his career, Shin-Ae Lee has collaborated with talented individuals in the field, such as Dong-Gun Park and Jeong-Dong Choe. These partnerships have likely fostered a dynamic exchange of ideas and fostered innovative breakthroughs that enhance the collective efforts within the semiconductor industry.

Conclusion

Inventor Shin-Ae Lee’s innovative approach and dedication to semiconductor technology make him a prominent figure in the realm of inventions. His latest patents reflect a commitment to enhancing device performance through advanced fabrication methods. As he continues to push the boundaries of innovation, Lee's contributions will undoubtedly shape the future of semiconductor technology.

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