The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2006

Filed:

Jan. 19, 2006
Applicants:

Sung-min Kim, Incheon Metropolitan, KR;

Dong-gun Park, Gyeonggi-do, KR;

Chang-sub Lee, Gyeonggi-do, KR;

Jeong-dong Choe, Gyeonggi-do, KR;

Shin-ae Lee, Gyeonggi-do, KR;

Seong-ho Kim, Gyeonggi-do, KR;

Inventors:

Sung-min Kim, Incheon Metropolitan, KR;

Dong-gun Park, Gyeonggi-do, KR;

Chang-sub Lee, Gyeonggi-do, KR;

Jeong-dong Choe, Gyeonggi-do, KR;

Shin-ae Lee, Gyeonggi-do, KR;

Seong-ho Kim, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit structure can include an isolation structure that electrically isolates an active region of an integrated circuit substrate from adjacent active regions and an insulation layer that extends from the isolation structure to beneath the active region. An epitaxial silicon layer extends from the active region through the insulation layer to a substrate beneath the insulation layer.


Find Patent Forward Citations

Loading…