The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Dec. 17, 2003
Seong-ho Kim, Gyeonggi-do, KR;
Chang-sub Lee, Gyeonggi-do, KR;
Jeong-dong Choe, Gyeonggi-do, KR;
Sung-min Kim, Incheon Metropolitan, KR;
Shin-ae Lee, Gyeonggi-do, KR;
Dong-gun Park, Gyeonggi-do, KR;
Seong-Ho Kim, Gyeonggi-do, KR;
Chang-Sub Lee, Gyeonggi-do, KR;
Jeong-Dong Choe, Gyeonggi-do, KR;
Sung-Min Kim, Incheon Metropolitan, KR;
Shin-Ae Lee, Gyeonggi-do, KR;
Dong-Gun Park, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a semiconductor substrate having a recess therein. A gate insulator is disposed on the substrate in the recess. The device further includes a gate electrode including a first portion on the gate insulator in the recess and a second reduced-width portion extending from the first portion. A source/drain region is disposed in the substrate adjacent the recess. The recess may have a curved shape, e.g., may have hemispherical or ellipsoid shape. The source/drain region may include a lighter-doped portion adjoining the recess. Relate fabrication methods are also discussed.