Hsinchu, Taiwan

Shih-Kuang Hsiao

This inventor holds 5 USPTO granted patents and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shih-Kuang Hsiao. Retrieved from https://idiyas.com/inventor/shih-kuang-hsiao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 5 

% Patents Active = 60.0

Average Co-Inventor Count = 5.4

ph-index = 2

Forward Citations = 29(Granted Patents)


Company Filing History:


Years Active: 2014-2017

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5 patents (USPTO):Explore Patents

Title: Shih-Kuang Hsiao: Innovator in Semiconductor Technology

Introduction

Shih-Kuang Hsiao is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on enhancing the performance and efficiency of transistors, which are crucial components in modern electronic devices.

Latest Patents

Among his latest patents, Hsiao has developed a transistor featuring a wing region. This innovative design includes an isolation region surrounding an active region, a gate dielectric layer over a portion of the active region, and a gate electrode positioned above the gate dielectric layer. The active region under the gate dielectric layer contains a channel region situated between a drain region and a source region, with at least one wing region adjoining the channel region. The wing region can be polygonal or curved, providing unique advantages in transistor functionality.

Another notable patent is for a high voltage drain-extended MOSFET that incorporates an extra drain-OD addition. This integrated circuit and its formation method involve creating a first well in a substrate, which has a first conductivity type, and establishing a first source/drain region within the first well, characterized by a second conductivity type. Additionally, a resistance protection ring is formed on the substrate, enhancing the reliability of the device.

Career Highlights

Shih-Kuang Hsiao is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to push the boundaries of semiconductor technology and contribute to advancements in the field.

Collaborations

Hsiao has collaborated with several talented individuals, including Chen-Liang Chu and Yi-Sheng Chen, who is a notable woman in the field. These collaborations have fostered innovation and have been instrumental in the development of new technologies.

Conclusion

Shih-Kuang Hsiao's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced electronic devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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