The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Jun. 26, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chen-Liang Chu, Hsinchu, TW;
Fei-Yuh Chen, Hsinchu, TW;
Yi-Sheng Chen, Hsinchu, TW;
Shih-Kuang Hsiao, Hsinchu, TW;
Chun Lin Tsai, Hsinchu, TW;
Kong-Beng Thei, Pao-Shan Village, TW;
Abstract
A transistor includes an isolation region surrounding an active region. The transistor also includes a gate dielectric layer over a portion of the active region. The transistor further includes a gate electrode over the gate dielectric layer. The portion of the active region under the gate dielectric layer includes a channel region between a drain region and a source region, and at least one wing region adjoining the channel region. The at least one wing region has a base edge adjoining the channel region. The at least one wing region is polygonal or curved.