The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Nov. 27, 2012
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yi-Sheng Chen, Hsin-Chu, TW;
Chen-Liang Chu, Hsin-Chu, TW;
Shih-Kuang Hsiao, Hsin-Chu, TW;
Fei-Yun Chen, Hsin-Chu, TW;
Kong-Beng Thei, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An integrated circuit includes a high-voltage well having a first doping type, a first doped region and a second doped region embedded in the high-voltage well, the first and second doped regions having a second doping type and spaced apart by a channel in the high-voltage well, source/drain regions formed in the first doped region and in the second doped region, each of the source/drain regions having the second doping type and more heavily doped than the first and second doped regions, first isolation regions spaced apart from each of the source/drain regions, and resistance protection oxide forming a ring surrounding each of the source/drain regions.