The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
May. 18, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Yi-Sheng Chen, Hsin-Chu, TW;
Chen-Liang Chu, Hsin-Chu, TW;
Shih-Kuang Hsiao, Hsin-Chu, TW;
Fei-Yuh Chen, Hsin-Chu, TW;
Kong-Beng Thei, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 29/0619 (2013.01); H01L 29/41758 (2013.01); H01L 29/7823 (2013.01); H01L 29/7833 (2013.01);
Abstract
An integrated circuit and a method of forming is provided. The method includes forming a first well in a substrate, the first well having a first conductivity type, and forming a first source/drain region in the first well, the first source/drain region having a second conductivity type. A resistance protection ring is formed on the substrate.