Shawn Gibb

Title: The Innovative Contributions of Shawn Gibb

Introduction

Shawn Gibb is a prominent inventor based in Charlotte, NC (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of gallium nitride (GaN) transistor structures. With a total of 8 patents to his name, Gibb's work has advanced the capabilities of high voltage and high power transistors.

Latest Patents

One of Gibb's latest patents is a high voltage GaN-based transistor structure. This invention discloses a high voltage and high power gallium nitride (GaN) transistor structure that includes a plurality of structural epitaxial layers, including a GaN buffer layer deposited on a substrate. A GaN termination layer is also included, which protects the structural epitaxial layers from surface reactions. The termination layer is designed to be thin enough to allow electrons to tunnel through it, thereby forming a high electron mobility transistor. Another notable patent relates to a high voltage GaN-based transistor structure that features a sub-buffer layer to prevent electron injection into the substrate during high voltage operation, enhancing the performance of the GaN transistor.

Career Highlights

Throughout his career, Shawn Gibb has worked with several notable companies, including RF Micro Devices, Inc. and Gelcore, LLC. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Gibb has collaborated with several professionals in his field, including Joseph A Smart and Brook Hosse. These collaborations have likely enriched his work and led to further advancements in his inventions.

Conclusion

Shawn Gibb's contributions to the field of semiconductor technology, particularly through his innovative GaN transistor structures, have made a significant impact. His patents reflect a commitment to advancing high voltage and high power applications, showcasing his role as a leading inventor in this domain.