The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2008
Filed:
Feb. 23, 2006
Joseph Smart, Mooresville, NC (US);
Brook Hosse, Huntersville, NC (US);
Shawn Gibb, Charlotte, NC (US);
David Grider, Huntersville, NC (US);
Jeffrey Shealy, Huntersville, NC (US);
Joseph Smart, Mooresville, NC (US);
Brook Hosse, Huntersville, NC (US);
Shawn Gibb, Charlotte, NC (US);
David Grider, Huntersville, NC (US);
Jeffrey Shealy, Huntersville, NC (US);
RF Micro Devices, Inc., Greensboro, NC (US);
Abstract
The present invention relates to a high voltage and high power gallium nitride (GaN) transistor structure. In general, the GaN transistor structure includes a sub-buffer layer that serves to prevent injection of electrons into a substrate during high voltage operation, thereby improving performance of the GaN transistor structure during high voltage operation. Preferably, the sub-buffer layer is aluminum nitride, and the GaN transistor structure further includes a transitional layer, a GaN buffer layer, and an aluminum gallium nitride Schottky layer.