The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Nov. 08, 2007
Joseph Smart, Mooresville, NC (US);
Brook Hosse, Huntersville, NC (US);
Shawn Gibb, Charlotte, NC (US);
David Grider, Huntersville, NC (US);
Jeffrey B. Shealy, Huntersville, NC (US);
Joseph Smart, Mooresville, NC (US);
Brook Hosse, Huntersville, NC (US);
Shawn Gibb, Charlotte, NC (US);
David Grider, Huntersville, NC (US);
Jeffrey B. Shealy, Huntersville, NC (US);
RF Micro Devices, Inc., Greensboro, NC (US);
Abstract
A high voltage and high power gallium nitride (GaN) transistor structure is disclosed. A plurality of structural epitaxial layers including a GaN buffer layer is deposited on a substrate. A GaN termination layer is deposited on the plurality of structural epitaxial layers. The GaN termination layer is adapted to protect the plurality of structural epitaxial layers from surface reactions. The GaN termination layer is sufficiently thin to allow electrons to tunnel through the GaN termination layer. Electrical contacts are deposited on the GaN termination layer, thereby forming a high electron mobility transistor.