Rf Micro Devices, Inc.

Gelcore, LLC

Shawn Gibb

Jeffrey Blanton Shealy

Joseph A Smart

Brook Hosse

David Grider

Ivan Eliashevich

Hari S Venugopalan

Prosanto K Mukerji

Robert F Karlicek

A high voltage and high power gallium nitride (GaN) transistor structure is disclosed. A plurality of structural epitaxial layers including a GaN buffer layer is deposited on a substrate. A GaN termination layer is deposited on the plurality of structural epitaxial layers. The GaN termination layer is adapted to protect the plurality of structural epitaxial layers from surface reactions. The GaN termination layer is sufficiently thin to allow electrons to tunnel through the GaN termination layer. Electrical contacts are deposited on the GaN termination layer, thereby forming a high electron mobility transistor.

High voltage GaN-based transistor structure

The present invention relates to a high voltage and high power gallium nitride (GaN) transistor structure. In general, the GaN transistor structure includes a sub-buffer layer that serves to prevent injection of electrons into a substrate during high voltage operation, thereby improving performance of the GaN transistor structure during high voltage operation. Preferably, the sub-buffer layer is aluminum nitride, and the GaN transistor structure further includes a transitional layer, a GaN buffer layer, and an aluminum gallium nitride Schottky layer.

The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more structural epitaxial layers deposited on a substrate, and the passivation layer deposited on the structural epitaxial layers. In general, the passivation layer is a dielectric material deposited on the GaN structure that serves to passivate surface traps on the surface of the structural epitaxial layers. Preferably, the passivation layer is a dense, thermally deposited silicon nitride passivation layer.

Surface passivation of GaN devices in epitaxial growth chamber

A light-emitting element () is disclosed. A light emitting diode (LED) includes a sapphire substrate () having front and back sides (), and a plurality of semiconductor layers () deposited on the front side () of the sapphire substrate (). The semiconductor layers () define a light-emitting structure that emits light responsive to an electrical input. A metallization stack () includes an adhesion layer () deposited on the back side () of the sapphire substrate (), and a solderable layer () connected to the adhesion layer () such that the solderable layer () is secured to the sapphire substrate () by the adhesion layer (). A support structure () is provided on which the LED is disposed. A solder bond () is arranged between the LED and the support structure (). The solder bond () secures the LED to the support structure ().

GaN LED with solderable backside metal

The present invention relates to an epitaxial structure having one or more structural epitaxial layers, including a gallium nitride (GaN) layer, which is deposited on a substrate, and a method of growing the epitaxial structure, wherein the structural epitaxial layers can be separated from the substrate. In general, a sacrificial epitaxial layer is deposited on the substrate between the substrate and the structural epitaxial layers, and the structural epitaxial layers are deposited on the sacrificial layer. After growth, the structural epitaxial layers are separated from the substrate by oxidizing the sacrificial layer. The structural epitaxial layers include a nucleation layer deposited on the sacrificial layer and a gallium nitride layer deposited on the nucleation layer. Optionally, the oxidation of the sacrificial layer may also oxidize the nucleation layer.

Epitaxy/substrate release layer

A light-emitting element ( ) is disclosed. A light emitting diode (LED) includes a sapphire substrate ( ) having front and back sides ( ), and a plurality of semiconductor layers ( ) deposited on the front side ( ) of the sapphire substrate ( ). The semiconductor layers ( ) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack ( ) includes an adhesion layer ( ) deposited on the back side ( ) of the sapphire substrate ( ), and a solderable layer ( ) connected to the adhesion layer ( ) such that the solderable layer ( ) is secured to the sapphire substrate ( ) by the adhesion layer ( ). A support structure ( ) is provided on which the LED is disposed. A solder bond ( ) is arranged between the LED and the support structure ( ). The solder bond ( ) secures the LED to the support structure ( ).

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Charlotte, NC, United States of America

Shawn Gibb