The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Apr. 04, 2006
Joseph Smart, Mooresville, NC (US);
David Grider, Huntersville, NC (US);
Shawn Gibb, Charlotte, NC (US);
Brook Hosse, Huntersville, NC (US);
Jeffrey Shealy, Huntersville, NC (US);
Joseph Smart, Mooresville, NC (US);
David Grider, Huntersville, NC (US);
Shawn Gibb, Charlotte, NC (US);
Brook Hosse, Huntersville, NC (US);
Jeffrey Shealy, Huntersville, NC (US);
RF Micro Devices, Inc., Greensboro, NC (US);
Abstract
The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more structural epitaxial layers deposited on a substrate, and the passivation layer deposited on the structural epitaxial layers. In general, the passivation layer is a dielectric material deposited on the GaN structure that serves to passivate surface traps on the surface of the structural epitaxial layers. Preferably, the passivation layer is a dense, thermally deposited silicon nitride passivation layer.