This inventor holds 10 USPTO granted patents. Top assignees: Industrial Technology Research Institute, Vanguard International Semiconductor Corporation. Active years: 1993-1998.
Location History:
- Taipei, TW (1993 - 1998)
- Hsin chu, TW (1998)
Company Filing History:
6 out of 9,301 
4 out of 1,132 
Years Active: 1993-1998
Title: Shaw-Tzeng Hsia: Innovator in Semiconductor Technology
Introduction
Shaw-Tzeng Hsia is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His innovative approaches have led to advancements in processes that enhance the performance and reliability of semiconductor devices.
Latest Patents
One of his latest patents is focused on an in-situ SOG etchback and deposition for the intermetal dielectric (IMD) process. This method improves the planarization and deposition of intermetal dielectric layers in semiconductor substrates. Unlike prior art, this method performs specific process steps in-situ, starting with cured spin-on-glass (SOG). The SOG etchback and deposition of the intermetal dielectric via plasma-enhanced chemical vapor deposition (PECVD) occur sequentially in the same chamber without a vacuum break. This innovation prevents the delamination of the SOG layer from the oxide layer and minimizes moisture exposure during metal deposition into via holes. Additionally, the method enhances the behavior of SOG through argon sputter treatment and/or oxygen plasma treatment in-situ, further improving the contact resistance of metal interfaces in via holes.
Another notable patent involves an optimized tungsten contact plug process using furnace annealed techniques. This process fills small diameter contact holes with tungsten while preventing damage to contact hole liner materials during deposition. It utilizes a titanium nitride barrier layer over a titanium adhesive layer, with enhanced barrier characteristics achieved through an anneal cycle in a nitrogen ambient. This annealing process incorporates additional nitrogen into the titanium nitride layer, forming a robust barrier against defects.
Career Highlights
Shaw-Tzeng Hsia has worked with esteemed organizations such as the Industrial Technology Research Institute and Vanguard International Semiconductor Corporation. His experience in these institutions has allowed him to develop and refine his innovative processes in semiconductor technology.
Collaborations
Throughout his career, Hsia has collaborated with notable colleagues, including Kuang-Chao Chen and Haw Yen. These partnerships have contributed to the advancement of semiconductor technologies and the successful implementation of his patented methods.
Conclusion
Shaw-Tzeng Hsia's contributions to semiconductor technology through his innovative patents and collaborative efforts have significantly impacted the industry. His work continues to pave the way for advancements in semiconductor manufacturing processes.