Sen-Huan Huang

Title: Sen-Huan Huang: Semiconductor Process Inventor

Introduction

Sen-Huan Huang is an inventor based in Tainan, Taiwan. His patent work focuses on semiconductor manufacturing processes, including methods for fabricating DRAM capacitors and self-aligned contact openings. He holds 8 patents.

Latest Patents

Huang’s listed patents address techniques for improving precision and insulation in semiconductor fabrication.

- **Method of Manufacturing DRAM Capacitor.** This method forms word lines and designated plugs above a substrate, then adds insulation material, bit-line contacts, and perpendicular bit lines. The bit lines connect electrically to the substrate through the contacts and plugs while remaining insulated from one another. A hard material layer covers each bit line, and a node contact is formed over the second plug.

- **Method of Fabricating a Self-Aligned Contact Opening.** This method uses polysilicon to protect a cap layer above a conductive line or a spacer corner along its sidewall. A silicon oxide layer is then etched to create the contact opening. The described etching process provides selectivity for silicon oxide over silicon nitride and polysilicon.

Career Highlights

Huang has been associated with Vanguard International Semiconductor Corporation and Winbond Electronics Corporation. His patent descriptions reflect work on semiconductor fabrication, particularly memory-device structures and contact formation.

Collaborations

Hsi-Chuan Chen and Yeur-Luen Tu are identified as Huang’s coworkers.

Conclusion

Sen-Huan Huang’s inventions address practical challenges in semiconductor manufacturing, with a focus on DRAM capacitor structures and reliable self-aligned contact openings.