The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2001
Filed:
Sep. 23, 1999
Applicant:
Inventors:
Haochieh Liu, Taipei, TW;
Bor-Ru Sheu, Hsinchu, TW;
Hsi-Chuan Chen, Tainan, TW;
Sen-Huan Huang, Tainan, TW;
Assignee:
Windbond Electronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13065 ;
U.S. Cl.
CPC ...
H01L 2/13065 ;
Abstract
A fabrication method for a self-aligned contact opening involves using polysilicon to protect a cap layer above a conductive line or even a corner of a spacer on a sidewall of the conductive line. A silicon oxide layer is then etched using a conventional silicon oxide etching recipe to form a self-aligned contact opening. This conventional silicon oxide etching recipe not only has a higher etching selectivity for silicon oxide to silicon nitride, but also yields a higher etching selectivity ratio for silicon oxide to polysilicon.