Haochieh Liu

Title: Haochieh Liu: Innovator in Memory Technology

Introduction

Haochieh Liu is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 6 patents. His innovative work focuses on enhancing the performance and efficiency of memory devices.

Latest Patents

Among his latest patents is a method of forming a ferroelectric memory cell. This MFMIS memory device features an inverted T-shaped gate stack, which is created using only one word line mask. The design is compatible with self-aligned etch processes, showcasing Liu's commitment to advancing memory technology. Another notable patent is for a flash memory cell and its fabrication. This invention includes a substrate, a tunnel oxide layer, a floating gate, an insulating layer, a control gate, and an inter-gate dielectric layer. The unique structure of the floating gate, which consists of two conductive layers, enhances the functionality of the memory cell.

Career Highlights

Haochieh Liu has worked with notable companies in the electronics sector, including Winbond Electronics Corporation and Windbond Electronics Corp. His experience in these organizations has allowed him to develop and refine his innovative ideas in memory technology.

Collaborations

Liu has collaborated with esteemed colleagues such as Bor-Ru Sheu and Hsi-Chuan Chen. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Haochieh Liu's contributions to memory technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative approaches continue to shape the future of memory devices.