Higashihiroshima, Japan

Seiichi Miyazaki


Average Co-Inventor Count = 3.5

ph-index = 3

Forward Citations = 37(Granted Patents)


Location History:

  • Hiroshima, JP (2006 - 2010)
  • Higashihiroshima, JP (2010 - 2014)

Company Filing History:


Years Active: 2006-2014

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7 patents (USPTO):Explore Patents

Title: The Innovations of Seiichi Miyazaki

Introduction

Seiichi Miyazaki is a prominent inventor based in Higashihiroshima, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on advanced semiconductor devices and memory systems, showcasing his expertise and innovative spirit.

Latest Patents

Miyazaki's latest patents include a groundbreaking semiconductor device featuring a floating gate structure. This device incorporates charge storage layers stacked on a SiO layer formed on a substrate made of n-type silicon. The charge storage layer consists of quantum dots made of undoped silicon, along with an oxide layer that covers these quantum dots. Additionally, his patents detail a semiconductor memory system that utilizes a composite floating structure, allowing for high-speed and stable multivalued memory operations.

Career Highlights

Throughout his career, Seiichi Miyazaki has worked with esteemed institutions such as Hiroshima University and Toshiba Corporation. His research and development efforts have significantly advanced the understanding and application of semiconductor technologies.

Collaborations

Miyazaki has collaborated with notable colleagues, including Katsunori Makihara and Seiichiro Higashi. These partnerships have fostered innovation and contributed to the success of his projects.

Conclusion

Seiichi Miyazaki's contributions to semiconductor technology and memory systems highlight his role as a leading inventor in the field. His innovative patents and collaborations continue to influence advancements in technology.

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