The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2007
Filed:
Feb. 21, 2006
Tsunetoshi Arikado, Ibaraki-ken, JP;
Takaaki Kawahara, Ibaraki-ken, JP;
Kazuyoshi Torii, Ibaraki-ken, JP;
Hiroshi Kitajima, Ibaraki-ken, JP;
Seiichi Miyazaki, Hiroshima, JP;
Tsunetoshi Arikado, Ibaraki-ken, JP;
Takaaki Kawahara, Ibaraki-ken, JP;
Kazuyoshi Torii, Ibaraki-ken, JP;
Hiroshi Kitajima, Ibaraki-ken, JP;
Seiichi Miyazaki, Hiroshima, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A gate insulating film on a silicon substrate of includes a SiOfilm and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiOfilm and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiOfilm or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.