The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Mar. 26, 2008
Katsunori Makihara, Higashihiroshima, JP;
Seiichi Miyazaki, Higashihiroshima, JP;
Seiichiro Higashi, Higashihiroshima, JP;
Katsunori Makihara, Higashihiroshima, JP;
Seiichi Miyazaki, Higashihiroshima, JP;
Seiichiro Higashi, Higashihiroshima, JP;
Hiroshima University, Higashihiroshima, Hiroshima, JP;
Abstract
A semiconductor memory has a composite floating structure in which quantum dots composed of Si and coated with a Si oxide thin film are deposited on an insulating film formed on a semiconductor substrate, quantum dots coated with a high-dielectric insulating film are deposited on the quantum dots, and quantum dots composed of Si and coated with a high-dielectric insulating film are further deposited. Each of the quantum dots includes a core layer and a clad layer which covers the core layer. The electron occupied level in the core layer is lower than that in the clad layer.